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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6288 2N6290 2N6292 DESCRIPTION With TO-220 package Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO PARAMETER 2N6288 2N6290 Collector-base voltage VCEO INCH Base current Collector-emitter voltage ANG 2N6292 2N6288 2N6290 SEM E Open base Open emitter DUC ICON CONDITIONS VALUE 40 60 80 30 50 70 TOR UNIT V V 2N6292 Open collector VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak 5 7 10 3 V A A A W ae ae Total power dissipation Junction temperature Storage temperature TC=25ae 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6288 VCEO(SUS) Collector-emitter sustaining voltage 2N6290 2N6292 2N6288 VCEsat-1 Collector-emitter saturation voltage 2N6290 2N6292 VCEsat-2 Collector-emitter saturation voltage 2N6288 VBE-1 Base-emitter on voltage IC=3A;IB=0.3A IC=2.5A;IB=0.25A IC=2A;IB=0.2A IC=7A;IB=3A IC=3A ; VCE=4V IC=2.5A ; VCE=4V IC=2A ; VCE=4V IC=7A ; VCE=4V IC=0.1A ;IB=0 2N6288 2N6290 2N6292 SYMBOL CONDITIONS MIN 30 50 70 TYP. MAX UNIT V 1.0 V 3.5 V VBE-2 Base-emitter on voltage 2N6290 1.5 V 2N6292 2N6288 ICEO Collector cut-off current INCH ANG 2N6290 EMIC ES VCE=20V; IB=0 VCE=40V; IB=0 VCE=60V; IB=0 OND TOR UC 3.0 1.0 0.1 2.0 0.1 2.0 0.1 2.0 1.0 V mA 2N6292 2N6288 2N6290 2N6292 VCE=40V; VBE=-1.5V VCE=30V; BE=-1.5V,TC=125ae VCE=60V; VBE=-1.5V VCE=50V; BE=-1.5V,TC=125ae VCE=80V; VBE=-1.5V VCE=70V; BE=-1.5V,TC=125ae VEB=5V; IC=0 ICEX Collector cut-off current mA IEBO Emitter cut-off current 2N6288 mA IC=3A ; VCE=4V IC=2.5A ; VCE=4V IC=2A ; VCE=4V IC=7A ; VCE=4V IC=0.5A ; VCE=4V;f=1MHz 2.3 2.5 MHz 30 150 hFE-1 DC current gain 2N6290 2N6292 hFE-2 fT DC current gain Transition frequency 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6288 2N6290 2N6292 HAN C SEM GE OND IC TOR UC IN Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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